N-Channel MOSFET, 137 A, 60 V, 8-Pin PQFN 3 x 3 Infineon IQE030N06NM5CGATMA1

The Infineon OptiMOSTM 5 60V PQFN 3.3x3.3 Source-Down features 60 V and low RDS(on) of 3.0 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.

Improved PCB losses
Enabling highest power density and performance

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