SiC N-Channel MOSFET, 22 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0120090J
- RS Stock No.:
- 192-3378
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- C3M0120090J
- ผู้ผลิต / Manufacturer:
- Wolfspeed
600 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Tube of 50)
THB360.321
(exc. VAT)
THB385.543
(inc. VAT)
| Units | Per unit | Per Tube* |
| 50 - 50 | THB360.321 | THB18,016.05 |
| 100 - 150 | THB349.511 | THB17,475.55 |
| 200 + | THB339.026 | THB16,951.30 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 192-3378
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- C3M0120090J
- ผู้ผลิต / Manufacturer:
- Wolfspeed
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- US
รายละเอียดสินค้า / Product Details
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.
New low-impedance package with driver source
High-speed switching with low capacitances
High blocking voltage with low RDS(on)
Avalanche ruggedness
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
High-speed switching with low capacitances
High blocking voltage with low RDS(on)
Avalanche ruggedness
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 22 A |
| Maximum Drain Source Voltage | 900 V |
| Package Type | TO-263-7 |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 120 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 83 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, 18 V |
| Length | 10.23mm |
| Transistor Material | SiC |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 17.3 nC @ 4/15V |
| Width | 9.12mm |
| Number of Elements per Chip | 1 |
| Height | 4.57mm |
| Minimum Operating Temperature | -55 °C |