N-Channel MOSFET, 79 A, 100 V, 8-Pin SO-8 Vishay Siliconix SIR104DP-T1-RE3

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TrenchFET® Gen IV power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM

คุณสมบัติ	Value
Channel Type	N
Maximum Continuous Drain Current	79 A
Maximum Drain Source Voltage	100 V
Package Type	SO-8
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	3.5V
Maximum Power Dissipation	100 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Number of Elements per Chip	1
Width	5mm
Typical Gate Charge @ Vgs	56 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	5.99mm
Forward Diode Voltage	1.1V
Height	1.07mm
Minimum Operating Temperature	-55 °C