Dual N-Channel MOSFET, 49 A, 60 V, 8-Pin DFN onsemi NVMFD5C672NLWFT1G
- RS Stock No.:
- 172-3408
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- NVMFD5C672NLWFT1G
- ผู้ผลิต / Manufacturer:
- onsemi
950 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each: (In a Pack of 25)
THB65.039
(exc. VAT)
THB69.592
(inc. VAT)
| Units | Per unit | Per Pack* |
| 25 - 350 | THB65.039 | THB1,625.975 |
| 375 - 725 | THB63.413 | THB1,585.325 |
| 750 + | THB62.437 | THB1,560.925 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 172-3408
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- NVMFD5C672NLWFT1G
- ผู้ผลิต / Manufacturer:
- onsemi
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 49 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DFN |
| Series | NVMFD5C672NL |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 16.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 45 W |
| Maximum Gate Source Voltage | ±20 V |
| Width | 5.1mm |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 2 |
| Length | 6.1mm |
| Typical Gate Charge @ Vgs | 12.3 nC @ 10 V |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Automotive Standard | AEC-Q101 |
| Height | 1.05mm |