SiC MOSFET, 2 + Tab-Pin TO-220 onsemi FFSP2065A

This range of Silicon Carbide (SiC) Schottky Diodes from ON Semiconductor use a completely new technology providing superior switching performance as well as higher reliability to silicon. No reverse recovery current and temperature independent switching characteristics along with excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.

System benefits include the highest efficiency, even faster operating frequency, greater power density and reduced EMI topped off with reduced system size and overall cost.

• Max Junction Temperature 175 °C
• High Surge Current Capacity
• Positive Temperature Coefficient
• No Reverse Recovery / No Forward Recovery
• Suitable for applications such as PFC, Industrial Power, Solar, EV Charger, UPS and Welding