- RS Stock No.:
- 170-4341
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- DN2540N3-G
- ผู้ผลิต / Manufacturer:
- Microchip
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 10/07/2024, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Bag of 1000)
THB30.726
(exc. VAT)
THB32.877
(inc. VAT)
Units | Per unit | Per Bag* |
1000 - 1000 | THB30.726 | THB30,726.00 |
2000 - 3000 | THB30.058 | THB30,058.00 |
4000 + | THB29.39 | THB29,390.00 |
*ตัวบ่งบอกราคา / price indicative |
- RS Stock No.:
- 170-4341
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- DN2540N3-G
- ผู้ผลิต / Manufacturer:
- Microchip
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- TH
รายละเอียดสินค้า / Product Details
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Typical Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
The Microchip DN2540 N-channel depletion mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. It has Drain-to-source and Drain-to-gate voltage of 400V and static drain-to-source on-state resistance of 25Ω.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Lead (Pb)-free
3-lead TO-92 package
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Lead (Pb)-free
3-lead TO-92 package
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Microchip
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 120 mA |
Maximum Drain Source Voltage | 400 V |
Series | DN2540 |
Package Type | TO-92 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 25 Ω |
Channel Mode | Depletion |
Number of Elements per Chip | 1 |
Transistor Material | Silicon |