N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB64N25S320ATMA1
- RS Stock No.:
- 170-2295
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPB64N25S320ATMA1
- ผู้ผลิต / Manufacturer:
- Infineon
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 28/04/2025, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (On a Reel of 1000)
THB126.677
(exc. VAT)
THB135.544
(inc. VAT)
| Units | Per unit | Per Reel* |
| 1000 - 1000 | THB126.677 | THB126,677.00 |
| 2000 - 3000 | THB123.924 | THB123,924.00 |
| 4000 + | THB121.17 | THB121,170.00 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 170-2295
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IPB64N25S320ATMA1
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
Summary of Features:
N-channel - Enhancement mode
175°C operating temperature
Green Product
Benefits:
low RDS (on) in trench technology- down to 19.3 mOhm
highest current capability 64A
low switching and conduction power losses for high thermal efficiency
robust packages with superior quality and reliability
optimized total gate charge enables smaller driver output stages
Target Applications:
Hybrid inverter
DC/DC
Piezo Injection
N-channel - Enhancement mode
175°C operating temperature
Green Product
Benefits:
low RDS (on) in trench technology- down to 19.3 mOhm
highest current capability 64A
low switching and conduction power losses for high thermal efficiency
robust packages with superior quality and reliability
optimized total gate charge enables smaller driver output stages
Target Applications:
Hybrid inverter
DC/DC
Piezo Injection
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 64 A |
| Maximum Drain Source Voltage | 250 V |
| Package Type | D2PAK (TO-263) |
| Series | IPB64N25S3-20 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 20 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 300 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Width | 10.25mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Length | 10mm |
| Typical Gate Charge @ Vgs | 67 nC @ 10 V |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Height | 4.4mm |