- RS Stock No.:
- 170-2276
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRF7470TRPBF
- ผู้ผลิต / Manufacturer:
- Infineon
ผลิตภัณฑ์ที่เลิกผลิตแล้ว
- RS Stock No.:
- 170-2276
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRF7470TRPBF
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
สถานะRoHS: ไม่สามารถใช้ได้
รายละเอียดสินค้า / Product Details
Benefits:
Low RDS(on)
Dynamic dv/dt Rating
Fast Switching
175°C Operating Temperature
Low RDS(on)
Dynamic dv/dt Rating
Fast Switching
175°C Operating Temperature
MOSFETs - N-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.
A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.
A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 10 A |
Maximum Drain Source Voltage | 40 V |
Package Type | SO |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 30 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 0.8V |
Maximum Power Dissipation | 2.5 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | 12 V |
Width | 4mm |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 29 nC @ 4.5 V |
Length | 5mm |
Forward Diode Voltage | 1.3V |
Height | 1.5mm |
Minimum Operating Temperature | -55 °C |
Series | IRF7470PbF |