- RS Stock No.:
- 168-4886
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- C3M0065100K
- ผู้ผลิต / Manufacturer:
- Wolfspeed
1770 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
ราคา / Price Each (In a Tube of 30)
THB800.249
(exc. VAT)
THB856.266
(inc. VAT)
Units | Per unit | Per Tube* |
30 - 30 | THB800.249 | THB24,007.47 |
60 - 90 | THB776.241 | THB23,287.23 |
120 + | THB752.954 | THB22,588.62 |
*ตัวบ่งบอกราคา / price indicative |
- RS Stock No.:
- 168-4886
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- C3M0065100K
- ผู้ผลิต / Manufacturer:
- Wolfspeed
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
รายละเอียดสินค้า / Product Details
Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
New C3M Silicon Carbide (SiC) MOSFET technology
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Cree Inc.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 35 A |
Maximum Drain Source Voltage | 1000 V |
Package Type | TO-247-4 |
Mounting Type | Through Hole |
Pin Count | 4 |
Maximum Drain Source Resistance | 90 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 1.8V |
Maximum Power Dissipation | 113.5 W |
Maximum Gate Source Voltage | -8 V, +19 V |
Length | 16.13mm |
Typical Gate Charge @ Vgs | 35 nC @ 15 V, 35 nC @ 4 V |
Width | 5.21mm |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Transistor Material | SiC |
Series | C3M |
Height | 23.6mm |
Forward Diode Voltage | 4.8V |
Minimum Operating Temperature | -55 °C |