N-Channel MOSFET, 50 A, 500 V, 3-Pin TO-3P IXYS IXFQ50N50P3
- RS Stock No.:
- 168-4740
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXFQ50N50P3
- ผู้ผลิต / Manufacturer:
- IXYS
สามารถสั่งจองล่วงหน้าได้
เพิ่ม / Added
ราคา / Price Each (In a Tube of 30)
THB193.514
(exc. VAT)
THB207.06
(inc. VAT)
| Units | Per unit | Per Tube* |
| 30 + | THB193.514 | THB5,805.42 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 168-4740
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXFQ50N50P3
- ผู้ผลิต / Manufacturer:
- IXYS
Legislation and Compliance
- COO (Country of Origin):
- US
รายละเอียดสินค้า / Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 50 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | TO-3P |
| Series | HiperFET, Polar3 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 125 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 960 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Length | 15.8mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 85 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Width | 4.9mm |
| Height | 20.3mm |
| Minimum Operating Temperature | -55 °C |