N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227 IXYS IXFN102N30P
- RS Stock No.:
- 168-4467
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXFN102N30P
- ผู้ผลิต / Manufacturer:
- IXYS
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 14/10/2024, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Tube of 10)
THB878.909
(exc. VAT)
THB940.433
(inc. VAT)
| Units | Per unit | Per Tube* |
| 10 - 10 | THB878.909 | THB8,789.09 |
| 20 - 30 | THB852.542 | THB8,525.42 |
| 40 + | THB826.966 | THB8,269.66 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 168-4467
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXFN102N30P
- ผู้ผลิต / Manufacturer:
- IXYS
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 86 A |
| Maximum Drain Source Voltage | 300 V |
| Package Type | SOT-227 |
| Series | HiperFET, Polar |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 33 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 570 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 25.42mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 224 nC @ 10 V |
| Length | 38.23mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 9.6mm |