- RS Stock No.:
- 165-5144
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- DN3135K1-G
- ผู้ผลิต / Manufacturer:
- Microchip
9000 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
ราคา / Price Each (On a Reel of 3000)
THB21.451
(exc. VAT)
THB22.953
(inc. VAT)
Units | Per unit | Per Reel* |
3000 - 3000 | THB21.451 | THB64,353.00 |
6000 - 9000 | THB20.914 | THB62,742.00 |
12000 + | THB20.392 | THB61,176.00 |
*ตัวบ่งบอกราคา / price indicative |
- RS Stock No.:
- 165-5144
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- DN3135K1-G
- ผู้ผลิต / Manufacturer:
- Microchip
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Typical Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Microchip
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 72 mA |
Maximum Drain Source Voltage | 350 V |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 35 Ω |
Channel Mode | Depletion |
Maximum Power Dissipation | 360 mW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -3.5 V |
Width | 1.4mm |
Number of Elements per Chip | 1 |
Length | 3.04mm |
Maximum Operating Temperature | +150 °C |
Forward Diode Voltage | 1.8V |
Minimum Operating Temperature | -55 °C |
Series | DN3135 |
Height | 1.02mm |