N-Channel MOSFET, 79 A, 40 V, 4-Pin LFPAK56 Nexperia BUK9Y7R6-40E,115
- RS Stock No.:
- 153-2826
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- BUK9Y7R6-40E,115
- ผู้ผลิต / Manufacturer:
- Nexperia
ขออภัย เราไม่สามารถตรวจสอบสต็อคสินค้าได้ในเวลานี้ โปรดรีเฟรชเพจอีกครั้ง
เพิ่ม / Added
ราคา / Price Each (On a Reel of 1500)
THB23.194
(exc. VAT)
THB24.818
(inc. VAT)
| Units | Per unit | Per Reel* |
| 1500 - 1500 | THB23.194 | THB34,791.00 |
| 3000 - 4500 | THB22.498 | THB33,747.00 |
| 6000 + | THB21.823 | THB32,734.50 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 153-2826
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- BUK9Y7R6-40E,115
- ผู้ผลิต / Manufacturer:
- Nexperia
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56, Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 79 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | LFPAK56 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 15.28 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.45V |
| Minimum Gate Threshold Voltage | 0.5V |
| Maximum Power Dissipation | 95 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 15 V |
| Maximum Operating Temperature | +175 °C |
| Width | 4.1mm |
| Number of Elements per Chip | 1 |
| Length | 5mm |
| Typical Gate Charge @ Vgs | 5.5 nC @ 10 V |
| Automotive Standard | AEC-Q101 |
| Minimum Operating Temperature | -55 °C |
| Height | 1.05mm |