N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXYS IXFN200N10P
- RS Stock No.:
- 125-8040
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXFN200N10P
- ผู้ผลิต / Manufacturer:
- IXYS
110 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each
THB978.01
(exc. VAT)
THB1,046.47
(inc. VAT)
| Units | Per unit |
| 1 - 2 | THB978.01 |
| 3 - 4 | THB953.57 |
| 5 + | THB938.89 |
- RS Stock No.:
- 125-8040
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXFN200N10P
- ผู้ผลิต / Manufacturer:
- IXYS
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 200 A |
| Maximum Drain Source Voltage | 100 V |
| Series | Polar HiPerFET |
| Package Type | SOT-227 |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 7.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 680 W |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 235 nC @ 10 V |
| Length | 38.23mm |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Width | 25.07mm |
| Height | 9.6mm |
| Forward Diode Voltage | 1.5V |
| Minimum Operating Temperature | -55 °C |