N-Channel MOSFET, 343 A, 40 V, 3-Pin TO-220AB Infineon IRLB3034PBF
- RS Stock No.:
- 124-9024
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRLB3034PBF
- ผู้ผลิต / Manufacturer:
- Infineon
100 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Tube of 50)
THB114.426
(exc. VAT)
THB122.436
(inc. VAT)
| Units | Per unit | Per Tube* |
| 50 - 50 | THB114.426 | THB5,721.30 |
| 100 - 150 | THB111.939 | THB5,596.95 |
| 200 + | THB109.451 | THB5,472.55 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 124-9024
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRLB3034PBF
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- MX
รายละเอียดสินค้า / Product Details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 343 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 4.83mm |
| Typical Gate Charge @ Vgs | 108 nC @ 4.5 V |
| Transistor Material | Si |
| Length | 10.67mm |
| Maximum Operating Temperature | +175 °C |
| Height | 9.02mm |
| Minimum Operating Temperature | -55 °C |
| Series | HEXFET |