N-Channel MOSFET, 57 A, 250 V, 3-Pin TO-247AC Infineon IRFP4332PBF
- RS Stock No.:
- 124-9018
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRFP4332PBF
- ผู้ผลิต / Manufacturer:
- Infineon
575 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Tube of 25)
THB180.771
(exc. VAT)
THB193.425
(inc. VAT)
| Units | Per unit | Per Tube* |
| 25 - 25 | THB180.771 | THB4,519.275 |
| 50 - 75 | THB176.841 | THB4,421.025 |
| 100 + | THB172.911 | THB4,322.775 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 124-9018
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRFP4332PBF
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- MX
รายละเอียดสินค้า / Product Details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 57 A |
| Maximum Drain Source Voltage | 250 V |
| Package Type | TO-247AC |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 33 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 360 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Typical Gate Charge @ Vgs | 99 nC @ 10 V |
| Width | 5.3mm |
| Length | 15.9mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Series | HEXFET |
| Height | 20.3mm |
| Minimum Operating Temperature | -40 °C |