N-Channel MOSFET, 17 A, 60 V, 3-Pin TO-220AB Fairchild FDP038AN06A0
- RS Stock No.:
- 124-1747
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- FDP038AN06A0
- ผู้ผลิต / Manufacturer:
- Fairchild Semiconductor
สามารถสั่งจองล่วงหน้าได้
เพิ่ม / Added
ราคา / Price Each (In a Tube of 50)
THB127.34
(exc. VAT)
THB136.25
(inc. VAT)
| Units | Per unit | Per Tube* |
| 50 - 50 | THB127.34 | THB6,367.00 |
| 100 - 200 | THB115.76 | THB5,788.00 |
| 250 - 450 | THB106.12 | THB5,306.00 |
| 500 - 950 | THB97.96 | THB4,898.00 |
| 1000 + | THB90.96 | THB4,548.00 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 124-1747
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- FDP038AN06A0
- ผู้ผลิต / Manufacturer:
- Fairchild Semiconductor
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
รายละเอียดสินค้า / Product Details
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 17 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 310 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 96 nC @ 10 V |
| Length | 10.67mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Width | 4.83mm |
| Number of Elements per Chip | 1 |
| Series | PowerTrench |
| Height | 9.65mm |
| Minimum Operating Temperature | -55 °C |