- RS Stock No.:
- 124-1674
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- HUF75639P3
- ผู้ผลิต / Manufacturer:
- onsemi
500 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Tube of 50)
THB71.995
(exc. VAT)
THB77.035
(inc. VAT)
Units | Per unit | Per Tube* |
50 - 50 | THB71.995 | THB3,599.75 |
100 - 150 | THB70.43 | THB3,521.50 |
200 + | THB68.865 | THB3,443.25 |
*ตัวบ่งบอกราคา / price indicative |
- RS Stock No.:
- 124-1674
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- HUF75639P3
- ผู้ผลิต / Manufacturer:
- onsemi
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
ไม่สอดคล้อง
รายละเอียดสินค้า / Product Details
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 56 A |
Maximum Drain Source Voltage | 100 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 25 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 200 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Typical Gate Charge @ Vgs | 110 nC @ 20 V |
Width | 4.83mm |
Number of Elements per Chip | 1 |
Length | 10.67mm |
Transistor Material | Si |
Maximum Operating Temperature | +175 °C |
Series | UltraFET |
Minimum Operating Temperature | -55 °C |
Height | 9.4mm |