- RS Stock No.:
- 123-6147
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRL60SL216
- ผู้ผลิต / Manufacturer:
- Infineon
ผลิตภัณฑ์ที่เลิกผลิตแล้ว
- RS Stock No.:
- 123-6147
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRL60SL216
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
StrongIRFET™ Logic-Level Power MOSFET, Infineon
An extension to the Infineon StrongIRFET family optimised for +5V logic-level gate drive. They share the same characteristics as the existing StrongIRFET family, such as low RDS(on) for greater efficiency, and high current carrying capacity for improved ruggedness and operational reliability.
Optimal RDS(on) @ VGS = +4.5V
Suitable for battery-powered systems
Applications: Motor drivers, synchronous rectifier systems, OR-ing & Redundant power switches, DC-DC converters
Suitable for battery-powered systems
Applications: Motor drivers, synchronous rectifier systems, OR-ing & Redundant power switches, DC-DC converters
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 298 A |
Maximum Drain Source Voltage | 60 V |
Package Type | I2PAK (TO-262) |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 2.2 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.4V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 375 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 4.83mm |
Transistor Material | Si |
Length | 10.67mm |
Typical Gate Charge @ Vgs | 170 nC @ 4.5 V |
Maximum Operating Temperature | +175 °C |
Series | StrongIRFET |
Forward Diode Voltage | 1.2V |
Height | 11.3mm |
Minimum Operating Temperature | -55 °C |