- RS Stock No.:
- 193-464
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXFN102N30P
- ผู้ผลิต / Manufacturer:
- IXYS
- RS Stock No.:
- 193-464
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IXFN102N30P
- ผู้ผลิต / Manufacturer:
- IXYS
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 86 A |
Maximum Drain Source Voltage | 300 V |
Package Type | SOT-227B |
Mounting Type | Screw Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 33 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 570 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Width | 25.42mm |
Number of Elements per Chip | 1 |
Length | 38.23mm |
Typical Gate Charge @ Vgs | 224 nC @ 10 V |
Series | HiperFET, Polar |
Minimum Operating Temperature | -55 °C |
Height | 9.6mm |