Sanyo 2SK1332-3-TL-E N-Channel JFET, 30 V, 3-Pin MCP

  • RS Stock No. 663-9033
  • หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No. 2SK1332-3-TL-E
  • ผู้ผลิต / Manufacturer Sanyo
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
รายละเอียดสินค้า / Product Details

JFET, Sanyo

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

คุณสมบัติ / Specifications
คุณสมบัติ Value
Channel Type N
Maximum Drain Source Voltage 30 V
Maximum Drain Gate Voltage -30V
Configuration Single
Mounting Type Surface Mount
Package Type MCP
Pin Count 3
Drain Gate On-Capacitance 0.9pF
Source Gate On-Capacitance 5pF
Dimensions 2 x 1.25 x 0.9mm
Width 1.25mm
Maximum Operating Temperature +150 °C
Length 2mm
Height 0.9mm
สินค้าหมดชั่วคราว, จะเป็นแบ๊คออเดอร์จัดส่งเมื่อในสต๊อกมีของพร้อมส่ง
ราคา / Price Each: (In a Pack of 5)
THB 11.00
(exc. VAT)
THB 11.77
(inc. VAT)
Units
Per unit
Per Pack*
5 - 995
THB11.00
THB55.00
1000 +
THB5.00
THB25.00
*ตัวบ่งบอกราคา / price indicative
ตัวเลือกบรรจุภัณฑ์ / Packaging Options :
Related Products
OptiMOS™ products are available in high performance packages ...
Description:
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next ...
The Infineon range of discrete HEXFET® power MOSFETs ...
Description:
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction ...
PowerTrench® MOSFETs are optimised power switches that offer ...
Description:
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC ...
Infineon’s dual power MOSFETs integrate two HEXFET® devices ...
Description:
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel ...