NXP BF545A,215 N-Channel JFET, 30 V, Idss 2.0 → 6.5mA, 3-Pin SOT-23

  • RS Stock No. 626-2327
  • หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No. BF545A,215
  • ผู้ผลิต / Manufacturer NXP
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
รายละเอียดสินค้า / Product Details

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

คุณสมบัติ / Specifications
คุณสมบัติ Value
Channel Type N
Idss Drain-Source Cut-off Current 2.0 → 6.5mA
Maximum Drain Source Voltage 30 V
Maximum Gate Source Voltage -30 V
Maximum Drain Gate Voltage -30V
Transistor Configuration Single
Configuration Single
Mounting Type Surface Mount
Package Type SOT-23 (TO-236AB)
Pin Count 3
Dimensions 3 x 1.4 x 1mm
Maximum Operating Temperature +150 °C
Length 3mm
Width 1.4mm
Height 1mm
Minimum Operating Temperature -65 °C
110 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
ราคา / Price Each: (In a Pack of 10)
THB 16.967
(exc. VAT)
THB 18.155
(inc. VAT)
Units
Per unit
Per Pack*
10 - 10
THB16.967
THB169.67
20 - 40
THB15.271
THB152.71
50 - 90
THB13.913
THB139.13
100 - 190
THB12.895
THB128.95
200 +
THB11.877
THB118.77
*ตัวบ่งบอกราคา / price indicative
ตัวเลือกบรรจุภัณฑ์ / Packaging Options :
Related Products
Planar Schottky barrier diode with an integrated guard ...
Description:
Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. Low forward voltage: VF ≤ 400 mVLow leakage current: IR ≤ 2 μAReverse voltage VR ≤ 30 VLow ...
Medium power low VF Schottky rectifiers single ≥ ...
Description:
Medium power low VF Schottky rectifiers single ≥ 200 mA, Helping you extend battery life with essential solutions, Our AEC-Q101 qualified low voltage-drop MEGA (Maximum Efficiency General Application) Schottky diodes offer high performance and high efficiency. Space saving in small ...
This ON Semiconductor Schottky power rectifier employs the ...
Description:
This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in ...
A range of Schottky Rectifiers from Vishay Semiconducto. ...
Description:
A range of Schottky Rectifiers from Vishay Semiconducto. These diodes exhibit very low forward voltage drop with a very fast switching action. The reverse recovery times of Schottky diodes are extremely short and they are suitable for applications requiring fast ...