STMicroelectronics STGF10NB60SD IGBT, 23 A 600 V, 3-Pin TO-220FP, Through Hole
- RS Stock No.:
- 877-2873
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- STGF10NB60SD
- ผู้ผลิต / Manufacturer:
- STMicroelectronics
30 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each: (In a Pack of 10)
THB74.429
(exc. VAT)
THB79.639
(inc. VAT)
| Units | Per unit | Per Pack* |
| 10 - 10 | THB74.429 | THB744.29 |
| 20 - 20 | THB72.567 | THB725.67 |
| 30 + | THB71.45 | THB714.50 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 877-2873
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- STGF10NB60SD
- ผู้ผลิต / Manufacturer:
- STMicroelectronics
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
รายละเอียดสินค้า / Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Maximum Continuous Collector Current | 23 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 25 W |
| Package Type | TO-220FP |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 10.4 x 4.6 x 20mm |
| Energy Rating | 8mJ |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Gate Capacitance | 610pF |