STMicroelectronics STGWT30H60DFB IGBT, 60 A 600 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 860-7325
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- STGWT30H60DFB
- ผู้ผลิต / Manufacturer:
- STMicroelectronics
150 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each: (In a Pack of 2)
THB139.12
(exc. VAT)
THB148.86
(inc. VAT)
| Units | Per unit | Per Pack* |
| 2 - 6 | THB139.12 | THB278.24 |
| 8 - 14 | THB136.34 | THB272.68 |
| 16 + | THB133.615 | THB267.23 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 860-7325
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- STGWT30H60DFB
- ผู้ผลิต / Manufacturer:
- STMicroelectronics
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 260 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 14.1mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |