Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3PN, Through Hole
- RS Stock No.:
- 799-4864
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- GT40WR21,Q(O
- ผู้ผลิต / Manufacturer:
- Toshiba
มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each
THB205.48
(exc. VAT)
THB219.86
(inc. VAT)
| Units | Per unit |
| 1 - 19 | THB205.48 |
| 20 - 49 | THB199.31 |
| 50 - 99 | THB193.15 |
| 100 - 249 | THB189.04 |
| 250 + | THB184.94 |
- RS Stock No.:
- 799-4864
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- GT40WR21,Q(O
- ผู้ผลิต / Manufacturer:
- Toshiba
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
รายละเอียดสินค้า / Product Details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Maximum Continuous Collector Current | 40 A |
| Maximum Collector Emitter Voltage | 1800 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 375 W |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.5 x 4.5 x 20mm |
| Maximum Operating Temperature | +175 °C |