Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 796-5061
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- GT50JR21
- ผู้ผลิต / Manufacturer:
- Toshiba
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 04/10/2024, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each
THB240.10
(exc. VAT)
THB256.91
(inc. VAT)
| Units | Per unit |
| 1 - 6 | THB240.10 |
| 7 - 12 | THB234.09 |
| 13 + | THB230.48 |
- RS Stock No.:
- 796-5061
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- GT50JR21
- ผู้ผลิต / Manufacturer:
- Toshiba
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
IGBT Discretes, Toshiba
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Maximum Continuous Collector Current | 50 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 230 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.5 x 4.5 x 20mm |
| Maximum Operating Temperature | +175 °C |