Renesas Electronics RJH65S04DPQ-A0 IGBT, 100 A 650 V, 3-Pin TO-247A, Through Hole
- RS Stock No.:
- 784-6355P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- RJH65S04DPQ-A0
- ผู้ผลิต / Manufacturer:
- Renesas Electronics
ผลิตภัณฑ์ที่เลิกผลิตแล้ว
- RS Stock No.:
- 784-6355P
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- RJH65S04DPQ-A0
- ผู้ผลิต / Manufacturer:
- Renesas Electronics
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
รายละเอียดสินค้า / Product Details
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Maximum Continuous Collector Current | 100 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Power Dissipation | 378 W |
| Package Type | TO-247A |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.94 x 5.02 x 21.13mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |