- RS Stock No.:
- 773-7364
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- NGTB15N60S1EG
- ผู้ผลิต / Manufacturer:
- onsemi
ผลิตภัณฑ์ที่เลิกผลิตแล้ว
- RS Stock No.:
- 773-7364
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- NGTB15N60S1EG
- ผู้ผลิต / Manufacturer:
- onsemi
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Maximum Continuous Collector Current | 30 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 117 W |
Package Type | TO-220 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.28 x 4.82 x 15.75mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |