- RS Stock No.:
- 168-8877
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- STGF10NB60SD
- ผู้ผลิต / Manufacturer:
- STMicroelectronics
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 27/11/2024, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Tube of 50)
THB74.429
(exc. VAT)
THB79.639
(inc. VAT)
Units | Per unit | Per Tube* |
50 - 50 | THB74.429 | THB3,721.45 |
100 - 150 | THB72.196 | THB3,609.80 |
200 + | THB70.03 | THB3,501.50 |
*ตัวบ่งบอกราคา / price indicative |
- RS Stock No.:
- 168-8877
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- STGF10NB60SD
- ผู้ผลิต / Manufacturer:
- STMicroelectronics
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
รายละเอียดสินค้า / Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Maximum Continuous Collector Current | 23 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 25 W |
Package Type | TO-220FP |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.4 x 4.6 x 20mm |
Minimum Operating Temperature | -55 °C |
Gate Capacitance | 610pF |
Maximum Operating Temperature | +150 °C |
Energy Rating | 8mJ |