STMicroelectronics STGW30NC120HD IGBT, 60 A 1200 V, 3-Pin TO-247

  • RS Stock No. 168-7744
  • หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No. STGW30NC120HD
  • ผู้ผลิต / Manufacturer STMicroelectronics
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
รายละเอียดสินค้า / Product Details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

คุณสมบัติ / Specifications
คุณสมบัติ Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 220 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 15.75mm
Width 5.15mm
Height 20.15mm
Dimensions 15.75 x 5.15 x 20.15mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
150 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
ราคา / Price Each (In a Tube of 30)
THB 93.17
(exc. VAT)
THB 99.69
(inc. VAT)
Units
Per unit
Per Tube*
30 +
THB93.17
THB2,795.10
*ตัวบ่งบอกราคา / price indicative
Related Products
Insulated Gate Bipolar Transistors (IGBT) for motor drive ...
Description:
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Optimised IGBTs designed for medium frequency applications with ...
Description:
Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs.
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...