IXYS IXDN55N120D1 IGBT, 100 A 1200 V, 4-Pin SOT-227B

  • RS Stock No. 168-4761
  • หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No. IXDN55N120D1
  • ผู้ผลิต / Manufacturer IXYS
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
รายละเอียดสินค้า / Product Details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

คุณสมบัติ / Specifications
คุณสมบัติ Value
Maximum Continuous Collector Current 100 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 450 W
Package Type SOT-227B
Mounting Type Surface Mount
Channel Type N
Pin Count 4
Switching Speed 1MHz
Transistor Configuration Single
Length 38.2mm
Width 25.07mm
Height 9.6mm
Dimensions 38.2 x 25.07 x 9.6mm
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +150 °C
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 18/09/2020, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
ราคา / Price Each (In a Tube of 10)
คือ THB715.82
THB 625.056
(exc. VAT)
THB 668.81
(inc. VAT)
Units
Per unit
Per Tube*
10 +
THB625.056
THB6,250.56
*ตัวบ่งบอกราคา / price indicative
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