- RS Stock No.:
- 165-8178
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IKW40N120T2FKSA1
- ผู้ผลิต / Manufacturer:
- Infineon
180 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
ราคา / Price Each (In a Tube of 30)
THB243.122
(exc. VAT)
THB260.141
(inc. VAT)
Units | Per unit | Per Tube* |
30 - 30 | THB243.122 | THB7,293.66 |
60 - 90 | THB237.836 | THB7,135.08 |
120 + | THB232.551 | THB6,976.53 |
*ตัวบ่งบอกราคา / price indicative |
- RS Stock No.:
- 165-8178
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IKW40N120T2FKSA1
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
รายละเอียดสินค้า / Product Details
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 1100 to 1600V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Maximum Continuous Collector Current | 75 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 480 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 16.13 x 5.21 x 21.1mm |
Maximum Operating Temperature | +175 °C |
Gate Capacitance | 2360pF |
Energy Rating | 8.3mJ |
Minimum Operating Temperature | -40 °C |