- RS Stock No.:
- 145-8596
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IKP15N60TXKSA1
- ผู้ผลิต / Manufacturer:
- Infineon
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 01/08/2024, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
ราคา / Price Each (In a Tube of 50)
THB64.691
(exc. VAT)
THB69.219
(inc. VAT)
Units | Per unit | Per Tube* |
50 - 50 | THB64.691 | THB3,234.55 |
100 - 150 | THB62.75 | THB3,137.50 |
200 + | THB60.868 | THB3,043.40 |
*ตัวบ่งบอกราคา / price indicative |
- RS Stock No.:
- 145-8596
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IKP15N60TXKSA1
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
รายละเอียดสินค้า / Product Details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Maximum Continuous Collector Current | 26 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 130 W |
Package Type | TO-220 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.36 x 4.57 x 15.95mm |
Gate Capacitance | 860pF |
Energy Rating | 0.81mJ |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +175 °C |