- RS Stock No.:
- 145-8585
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IKP06N60TXKSA1
- ผู้ผลิต / Manufacturer:
- Infineon
450 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
ราคา / Price Each (In a Tube of 50)
THB45.214
(exc. VAT)
THB48.379
(inc. VAT)
Units | Per unit | Per Tube* |
50 - 50 | THB45.214 | THB2,260.70 |
100 - 150 | THB43.857 | THB2,192.85 |
200 + | THB42.542 | THB2,127.10 |
*ตัวบ่งบอกราคา / price indicative |
- RS Stock No.:
- 145-8585
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IKP06N60TXKSA1
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
รายละเอียดสินค้า / Product Details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Maximum Continuous Collector Current | 6 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 88 W |
Package Type | TO-220 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.36 x 4.57 x 15.95mm |
Minimum Operating Temperature | -40 °C |
Energy Rating | 0.335mJ |
Maximum Operating Temperature | +175 °C |
Gate Capacitance | 368pF |