onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole
- RS Stock No.:
- 124-1320
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- FGH60N60SMD
- ผู้ผลิต / Manufacturer:
- onsemi
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 05/03/2025, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Tube of 30)
THB187.549
(exc. VAT)
THB200.677
(inc. VAT)
| Units | Per unit | Per Tube* |
| 30 - 30 | THB187.549 | THB5,626.47 |
| 60 - 90 | THB183.471 | THB5,504.13 |
| 120 + | THB179.394 | THB5,381.82 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 124-1320
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- FGH60N60SMD
- ผู้ผลิต / Manufacturer:
- onsemi
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
Discrete IGBTs, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Maximum Continuous Collector Current | 120 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 600 W |
| Package Type | TO-247AB |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.6 x 4.7 x 20.6mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |