- RS Stock No.:
- 761-3757
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- FF300R12KS4HOSA1
- ผู้ผลิต / Manufacturer:
- Infineon
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 23/03/2026, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each
THB7,282.08
(exc. VAT)
THB7,791.83
(inc. VAT)
Units | Per unit |
1 - 2 | THB7,282.08 |
3 - 4 | THB7,100.03 |
5 + | THB6,990.81 |
ตัวเลือก
สินค้านี้ไม่มีจำหน่ายในขณะนี้ ลองดูสินค้าอื่นที่เราแนะนำ
- RS Stock No.:
- 761-3757
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- FF300R12KS4HOSA1
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Maximum Continuous Collector Current | 370 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 1.95 kW |
Configuration | Series |
Package Type | 62MM Module |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Series |
Dimensions | 106.4 x 61.4 x 30.9mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +125 °C |