IXYS MIXA225PF1200TSF Dual IGBT Module, 360 A 1200 V, 11-Pin SimBus F, PCB Mount
- RS Stock No.:
- 168-4565
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- MIXA225PF1200TSF
- ผู้ผลิต / Manufacturer:
- IXYS
สินค้าหมดชั่วคราว (Temporarily out of stock) - จะเป็นแบ๊คออเดอร์จัดส่ง (back order for despatch) 06/03/2026, จัดส่งภายใน (delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Box of 3)
THB4,830.753
(exc. VAT)
THB5,168.906
(inc. VAT)
| Units | Per unit | Per Box* |
| 3 - 3 | THB4,830.753 | THB14,492.259 |
| 6 - 9 | THB4,725.737 | THB14,177.211 |
| 12 + | THB4,620.723 | THB13,862.169 |
| *ตัวบ่งบอกราคา / price indicative | ||
- RS Stock No.:
- 168-4565
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- MIXA225PF1200TSF
- ผู้ผลิต / Manufacturer:
- IXYS
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- DE
รายละเอียดสินค้า / Product Details
IGBT Modules, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Maximum Continuous Collector Current | 360 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Power Dissipation | 1100 W |
| Configuration | Dual |
| Package Type | SimBus F |
| Mounting Type | PCB Mount |
| Channel Type | N |
| Pin Count | 11 |
| Transistor Configuration | Series |
| Dimensions | 152 x 62 x 17mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -40 °C |