- RS Stock No.:
- 146-1716
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- 7MBR25UA-120-50
- ผู้ผลิต / Manufacturer:
- Fuji Electric
ผลิตภัณฑ์ที่เลิกผลิตแล้ว
- RS Stock No.:
- 146-1716
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- 7MBR25UA-120-50
- ผู้ผลิต / Manufacturer:
- Fuji Electric
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
รายละเอียดสินค้า / Product Details
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Maximum Continuous Collector Current | 25 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 115 W |
Package Type | M711 |
Configuration | 3 Phase Bridge |
Mounting Type | PCB Mount |
Channel Type | N |
Pin Count | 24 |
Transistor Configuration | 3 Phase |
Dimensions | 107.5 x 45 x 17mm |
Maximum Operating Temperature | +150 °C |