- RS Stock No.:
- 111-6095
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- FP75R12KE3BOSA1
- ผู้ผลิต / Manufacturer:
- Infineon
3 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each
THB7,118.05
(exc. VAT)
THB7,616.31
(inc. VAT)
Units | Per unit |
1 - 2 | THB7,118.05 |
3 - 4 | THB6,940.11 |
5 + | THB6,833.35 |
- RS Stock No.:
- 111-6095
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- FP75R12KE3BOSA1
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
สถานะRoHS: ได้รับการยกเว้น
รายละเอียดสินค้า / Product Details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Maximum Continuous Collector Current | 105 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 355 W |
Package Type | AG-ECONO3-3 |
Configuration | 3 Phase Bridge |
Mounting Type | Panel Mount |
Channel Type | N |
Transistor Configuration | 3 Phase |
Dimensions | 122 x 62 x 17mm |
Maximum Operating Temperature | +125 °C |
Minimum Operating Temperature | -40 °C |