- RS Stock No.:
- 188-5402
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- FM24CL64B-G
- ผู้ผลิต / Manufacturer:
- Infineon
2522 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
เพิ่ม / Added
ราคา / Price Each (In a Tube of 97)
THB94.207
(exc. VAT)
THB100.801
(inc. VAT)
Units | Per unit | Per Tube* |
97 - 97 | THB94.207 | THB9,138.079 |
194 - 291 | THB92.134 | THB8,936.998 |
388 + | THB90.156 | THB8,745.132 |
*ตัวบ่งบอกราคา / price indicative |
- RS Stock No.:
- 188-5402
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- FM24CL64B-G
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- US
รายละเอียดสินค้า / Product Details
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA (typ) active current at 100 kHz
3 μA (typ) standby current
Voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100 μA (typ) active current at 100 kHz
3 μA (typ) standby current
Voltage operation: VDD = 2.7 V to 3.65 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Memory Size | 64kbit |
Organisation | 8K x 8 bit |
Interface Type | I2C |
Data Bus Width | 8bit |
Maximum Random Access Time | 550ns |
Mounting Type | Surface Mount |
Package Type | SOIC |
Pin Count | 8 |
Dimensions | 4.97 x 3.98 x 1.48mm |
Length | 4.97mm |
Maximum Operating Supply Voltage | 3.65 V |
Width | 3.98mm |
Height | 1.48mm |
Maximum Operating Temperature | +85 °C |
Automotive Standard | AEC-Q100 |
Minimum Operating Supply Voltage | 2.7 V |
Number of Bits per Word | 8bit |
Minimum Operating Temperature | -40 °C |
Number of Words | 8k |