onsemi 2N6042G PNP Bipolar Transistor, 8 A, 100 V dc, 3-Pin TO-220
- RS Stock No.:
- 184-4151
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- 2N6042G
- ผู้ผลิต / Manufacturer:
- onsemi
ผลิตภัณฑ์ที่เลิกผลิตแล้ว
- RS Stock No.:
- 184-4151
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- 2N6042G
- ผู้ผลิต / Manufacturer:
- onsemi
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
รายละเอียดสินค้า / Product Details
The 8 A, 100 V NPN Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. 2N6040, 2N6042 (PNP), and 2N6043, 2N6045 (NPN) are complementary devices.
High DC Current Gain -hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector-Emitter Sustaining Voltage - @ 100 mAdc -VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045
Low Collector-Emitter Saturation Voltage -VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Pb-Free Packages are Available
Collector-Emitter Sustaining Voltage - @ 100 mAdc -VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045
Low Collector-Emitter Saturation Voltage -VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Pb-Free Packages are Available
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Transistor Type | PNP |
| Maximum DC Collector Current | 8 A |
| Maximum Collector Emitter Voltage | 100 V dc |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Maximum Power Dissipation | 75 W |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | 100 V dc |
| Maximum Emitter Base Voltage | 5 V dc |
| Maximum Operating Frequency | 1 MHz |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Dimensions | 10.53 x 4.83 x 15.75mm |
| Maximum Operating Temperature | +150 °C |