Emitter-Switched Bipolar Transistors

คัดกรอง / Filters

กำลังดูสินค้า 1 - 2 รายการจาก 2 รายการ / Viewing 1 - 2 of 2 products
ผลการค้นหาต่อหน้า / Results Per Page
รายละเอียดสินค้า / Description ราคา / Price Category Dimensions Height Length Maximum Base Current Maximum Base Source Voltage Maximum Collector Source Voltage Maximum DC Collector Current Maximum Gate Source Voltage Maximum Operating Temperature Maximum Power Dissipation Minimum DC Current Gain Minimum Operating Temperature Mounting Type
RS Stock No. 864-8969
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.FJPF2145TU
THB26.71
Each: (In a Pack of 10)
Units
Power Transistor 10.36 x 4.9 x 16.07mm 16.07mm 10.36mm 1.5A ±20V 0.209V 5 A -20 V, +20 V +125 °C 40 W 8 -55 °C Through Hole
RS Stock No. 145-4678
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.FJPF2145TU
THB15.52
Each (In a Tube of 50)
Units
Power Transistor 10.36 x 4.9 x 16.07mm 16.07mm 10.36mm 1.5A ±20V 0.209V 5 A -20 V, +20 V +125 °C 40 W 8 -55 °C Through Hole
Related Products
A range of NXP BISS (Breakthrough In Small ...
Description:
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results ...
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
A range of NXP BISS (Breakthrough In Small ...
Description:
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors ...
A range of NXP BISS (Breakthrough In Small ...
Description:
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results ...