Emitter-Switched Bipolar Transistors

คัดกรอง / Filters

กำลังดูสินค้า 1 - 2 รายการจาก 2 รายการ / Viewing 1 - 2 of 2 products
ผลการค้นหาต่อหน้า / Results Per Page
รายละเอียดสินค้า / Description ราคา / Price Category Dimensions Height Length Maximum Base Current Maximum Base Source Voltage Maximum Collector Source Voltage Maximum DC Collector Current Maximum Gate Source Voltage Maximum Operating Temperature Maximum Power Dissipation Minimum DC Current Gain Minimum Operating Temperature Mounting Type
RS Stock No. 145-4678
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.FJPF2145TU
THB24.50
Each (In a Tube of 50)
Units
Power Transistor 10.36 x 4.9 x 16.07mm 16.07mm 10.36mm 1.5A ±20V 0.209V 5 A -20 V, +20 V +125 °C 40 W 8 -55 °C Through Hole
RS Stock No. 864-8969
หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.FJPF2145TU
THB24.50
Each: (In a Pack of 10)
Units
Power Transistor 10.36 x 4.9 x 16.07mm 16.07mm 10.36mm 1.5A ±20V 0.209V 5 A -20 V, +20 V +125 °C 40 W 8 -55 °C Through Hole
Related Products
The Darlington Bipolar Power Transistor is designed for ...
Description:
The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low speed switching motor control applications. Switching Regulators Collector-Emitter Voltage VCEV = 1000 VdcInvertersFast Turn-Off TimesSolenoids 80 ns Inductive Fall Time 100 C (Typ)Relay Drivers 120 ns Inductive Crossover ...
2SA2210 is a Bipolar Transistor, -50V, -20A, Low ...
Description:
2SA2210 is a Bipolar Transistor, -50V, -20A, Low VCE(sat), PNP TO-220F-3SG for High-Current Switching Applications. Adoption of MBIT processLarge current capacitanceLow collector to emitter saturation voltageHigh speed switching.
The Bipolar Power Transistor is designed for use ...
Description:
The Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications. The TIP31, TIP31A, TIP31B, TIP31C, (NPN), and TIP32, TIP32A, TIP32B, TIP32C,(PNP) are complementary devices. Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC ...
A range of NXP BISS (Breakthrough In Small ...
Description:
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors ...