Infineon 1200V 40A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH16G120C5XKSA1
- RS Stock No.:
- 133-9929
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IDH16G120C5XKSA1
- ผู้ผลิต / Manufacturer:
- Infineon
ผลิตภัณฑ์ที่เลิกผลิตแล้ว
- RS Stock No.:
- 133-9929
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IDH16G120C5XKSA1
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
รายละเอียดสินค้า / Product Details
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diodes and Rectifiers, Infineon
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
|---|---|
| Mounting Type | Through Hole |
| Package Type | TO-220 |
| Maximum Continuous Forward Current | 40A |
| Peak Reverse Repetitive Voltage | 1200V |
| Diode Configuration | Single |
| Diode Type | SiC Schottky |
| Pin Count | 2 + Tab |
| Maximum Forward Voltage Drop | 2.85V |
| Number of Elements per Chip | 1 |
| Diode Technology | SiC Schottky |
| Peak Non-Repetitive Forward Surge Current | 140A |