- RS Stock No.:
- 145-6863
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- C2M0025120D
- ผู้ผลิต / Manufacturer:
- Wolfspeed
1590 มีของพร้อมจัดส่งภายใน (In stock for delivery within) 4-6 วันทำการ (working days)
ราคา / Price Each (In a Tube of 30)
THB3,122.548
(exc. VAT)
THB3,341.126
(inc. VAT)
Units | Per unit | Per Tube* |
30 - 30 | THB3,122.548 | THB93,676.44 |
60 - 90 | THB3,028.872 | THB90,866.16 |
120 + | THB2,938.006 | THB88,140.18 |
*ตัวบ่งบอกราคา / price indicative |
- RS Stock No.:
- 145-6863
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- C2M0025120D
- ผู้ผลิต / Manufacturer:
- Wolfspeed
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
รายละเอียดสินค้า / Product Details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
Enhancement-mode N-channel SiC technology
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Wolfspeed
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 90 A |
Maximum Drain Source Voltage | 1200 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 34 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 463 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | +25 V |
Typical Gate Charge @ Vgs | 161 nC @ 20 V |
Length | 16.13mm |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Transistor Material | SiC |
Width | 21.1mm |
Height | 5.21mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 3.3V |