- RS Stock No.:
- 123-6144
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRF60B217
- ผู้ผลิต / Manufacturer:
- Infineon
ผลิตภัณฑ์ที่เลิกผลิตแล้ว
- RS Stock No.:
- 123-6144
- หมายเลขชิ้นส่วนของผู้ผลิต / Mfr. Part No.:
- IRF60B217
- ผู้ผลิต / Manufacturer:
- Infineon
ข้อมูลทางเทคนิค / Technical Data Sheets
Legislation and Compliance
รายละเอียดสินค้า / Product Details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
คุณสมบัติ / Specifications
คุณสมบัติ | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 60 A |
Maximum Drain Source Voltage | 60 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 9 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.7V |
Minimum Gate Threshold Voltage | 2.1V |
Maximum Power Dissipation | 83 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Typical Gate Charge @ Vgs | 44 nC @ 10 V |
Number of Elements per Chip | 1 |
Length | 10.67mm |
Maximum Operating Temperature | +175 °C |
Transistor Material | Si |
Width | 4.83mm |
Series | StrongIRFET |
Height | 16.51mm |
Forward Diode Voltage | 1.2V |
Minimum Operating Temperature | -55 °C |